Testing Configuration
Test |
FSB/DDR Feq. |
DIMM |
AP |
1 |
200/By SPD |
1+2 |
MemTest86+ V1.7,ltem 5and 7 / 3Loops |
2 |
200/By SPD |
1+2 |
MemTest86+ V1.7,ltem 5and 7 / 3Loops |
3 |
200/By SPD |
1+2 |
MemTest86+ V1.7,ltem 5and 7 / 3Loops |
4 |
200/By SPD |
1+2 |
MemTest86+ V1.7,ltem 5and 7 / 3Loops |
5 |
200/By SPD |
1+2 |
MemTest86+ V1.7,ltem 5and 7 / 3Loops |
Testing Result
DDR 2 |
Asset# |
Size |
Module Vendor |
Module P/N. |
Chip Vendor |
Chip P/N |
DRAM Timing |
Spec. |
T1 |
T2 |
T3 |
T4 |
T5 |
533 |
010030~010033 |
1GB |
GEIL |
GX22GB4300DC |
MICRON |
NA |
4.4.4.12 |
DS |
V |
V |
V |
V |
V |
533 |
009628~00931 |
512MG |
SiS |
SLX264M8-T5C |
SiS |
DDRII6408-6E |
5.4.4.12 |
SS |
V |
V |
V |
V |
V |
533 |
009103~009106 |
512MB |
KINGSTON |
KVR533D2N4/512 |
INFINEON |
HYB18T512 |
5.4.4.12 |
SS |
V |
V |
V |
V |
V |
533 |
009461~009464 |
256MB |
KINGSTON |
KVR533D2N4/256 |
INFINEON |
HY818T512160AC-3.7 |
5.4.4.12 |
SS |
V |
V |
V |
V |
V |
533 |
009099~009102 |
256MB |
KINGSTON |
KVR533D2N4/256 |
ELPIDA |
E5116AF-5C-E |
5.4.4.12 |
SS |
V |
V |
V |
V |
V |
533 |
009315~009318 |
256MB |
ELIXIR |
M2U25664TUH4A0F-37B |
ELIXIR |
N2TU51216AF-37B |
5.4.4.12 |
SS,
32X16 |
V |
V |
V |
V |
V |
533 |
011446~011449 |
512MB |
CORSAIR |
VS512MB533D2 |
CORSAIR |
64M8CEDG |
4.4.4.12 |
SS |
V |
V |
V |
V |
V |
667 |
009065~009068 |
1GB |
NANYA |
NT1GT64U8HB0BY-3C |
NANYA |
NT5TU64M8BE-3B |
5.5.5.15 |
DS |
V |
V |
V |
V |
V |
667 |
009069~009072 |
512MB |
NANYA |
NT512T64U88B0BY-3C |
NANYA |
NT5TU64M8BE-3B |
5.5.5.15 |
SS |
V |
V |
V |
V |
V |
667 |
011030~011033 |
1GB |
Kingston |
KVR667D2N5 |
ELPIDA |
E5108AG-6E-E |
5.5.5.15 |
ECC
DS |
V |
V |
V |
V |
V |
667 |
011340~011343 |
1GB |
Kingston |
KVR667D2N5K2/2G |
Promos |
V59C1512804QBF3 |
5.5.5.15 |
DS |
V |
V |
V |
V |
V |
667 |
011671~011674 |
512MB |
Kingston |
KVR667D2N5 |
N/A |
N/A |
5.5.5.15 |
SS |
V |
V |
V |
V |
V |
667 |
011667~011670 |
1GB |
Kingston |
KVR667D2E5/1G |
Hynix |
HY5PS12821B FP-Y5 |
5.5.5.15 |
DS |
V |
V |
V |
V |
V |
667 |
009810~009813 |
512MB |
SiS |
SLX264M8-T6E |
SiS |
DDRII6408-6E |
5.5.5.15 |
SS |
V |
V |
V |
V |
V |
DDR 2 |
Asset# |
Size |
Module Vendor |
Module P/N. |
Chip Vendor |
Chip P/N |
DRAM Timing |
Spec. |
T1 |
T2 |
T3 |
T4 |
T5 |
667 |
010034~010037 |
512MB |
GEIL |
GX21GB5300DC |
MICRON |
NA |
5.5.5.15 |
SS |
V |
V |
V |
V |
V |
667 |
011333~011336 |
1GB |
OCI |
4701G16CX5S1G |
INFINITY |
64M8PC5300 0650W |
5.5.5.15 |
DS |
V |
V |
V |
V |
V |
667 |
011329~011332 |
512MB |
OCI |
4751208CX5S1G |
INFINITY |
64M8PC5300 0650W |
5.5.5.15 |
SS |
V |
V |
V |
V |
V |
667 |
010479~010482 |
512MB |
PQI |
MEADR322LA |
PQI |
PQC2648S3R |
5,5,5,15 |
SS |
V |
V |
V |
V |
V |
667 |
007942~007943 |
256MB |
SAMSUNG |
M378T3354CZO-EC6 |
SAMSUNG |
K4T51163QC-ZCE6 |
5,5,5,15 |
SS,
32X16 |
V |
V |
V |
V |
V |
667 |
008822~008825 |
256MB |
PQI |
IMEAF-205HA |
Infineon |
HYB18T256 |
5.5.5.15 |
SS |
V |
V |
V |
V |
V |
667 |
012450~012453 |
512MB |
CORSAIR |
VS512MB667D2 |
CORSAIR |
64M8CFEG |
5,5,5,15 |
SS |
V |
V |
V |
V |
V |
800 |
007948, 007949 |
256MB |
SAMSUNG |
M378T3253FZ3-EC7 |
SAMSUNG |
K4T56083QF-ZCE7 |
5.5.5.16 |
SS
32X8 |
V |
V |
V |
V |
V |
800 |
011325~011328 |
512MB |
OCI |
475128JZ5B5D |
INFINITY |
32M16PC6400 0650W |
5,5,5,18 |
DS,
32X16 |
V |
V |
V |
V |
V |
800 |
011926~011929 |
1G |
OCI |
475128JZ5B5D |
INFINITY |
32M16PC6400 0650W |
5,5,5,18 |
SS,
32X16 |
V |
V |
V |
V |
V |
800 |
011840~011843 |
512MB |
Transcend |
TS64MLQ64V8J |
HYNIX |
HY5PS12821C FP-S5 649AA |
5,5,5,16 |
SS |
V |
V |
V |
V |
V |
800 |
011785~011788 |
1GB |
A-DATA |
ADQVE1A16 |
NA |
NA |
5,5,5,18 |
DS |
V |
V |
V |
V |
V |
|